document number: 86032 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.7, 30-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 fast avalanche sinterglass diode BYT56A, byt56b, byt56d, byt 56g, byt56j, byt56k, byt56m vishay semiconductors mechanical data case: sod-64 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 858 mg features ? glass passivated junction ? hermetically sealed package ? low reverse current ? soft recovery characteristics ? compliant to rohs di rective 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? very fast rectification and switching diode 949588 parts table part type differe ntiation package BYT56A v r = 50 v; i fav = 3 a sod-64 byt56b v r = 100 v; i fav = 3 a sod-64 byt56d v r = 200 v; i fav = 3 a sod-64 byt56g v r = 400 v; i fav = 3 a sod-64 byt56j v r = 600 v; i fav = 3 a sod-64 byt56k v r = 800 v; i fav = 3 a sod-64 byt56m v r = 1000 v; i fav = 3 a sod-64 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics BYT56A v r = v rrm 50 v byt56b v r = v rrm 100 v byt56d v r = v rrm 200 v byt56g v r = v rrm 400 v byt56j v r = v rrm 600 v byt56k v r = v rrm 800 v byt56m v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sine wave i fsm 80 a average forward current on pc board i fav 1.5 a l = 10mm i fav 3a non repetitive reverse avalanche energy i (br)r = 0.4 a e r 10 mj junction and storage temperature range t j = t stg - 55 to + 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86032 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.7, 30-jul-10 BYT56A, byt56b, byt56d, byt 56g, byt56j, byt56k, byt56m vishay semiconductors fast avalanche sinterglass diode typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - max. thermal re sistance vs. lead length fig. 2 - max. forward current vs. forward voltage fig. 3 - max. average forward current vs. ambient temperature fig. 4 - max. reverse curr ent vs. junction temperature maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 25 k/w on pc board with spacing 25 mm r thja 70 k/w electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 3 a v f --1.4v reverse current v r = v rrm i r --5a v r = v rrm , t j = 150 c i r - - 150 a reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr - - 100 ns 0 10 20 30 40 15 10 5 0 202530 r thja - ther. re s i s t. junction/ambient (k/w) l - lead length (mm) 949462 ll t l = con s tant i f - forward current (a) 0.001 0.01 0.1 1 10 100 0 0.5 1.0 1.5 2.0 3.0 2.5 v f - forward voltage (v) 16365 t j = 25 c t j = 175 c 16366 i fav - average forward current (a) 0 20 40 60 80 100 120 140 160 180 t amb - ambient temperature (c) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 v r = v rrm half s inewave r thja = 70 k/w pcb: d = 25 mm r thja = 25 k/w i = 10 mm 1 10 100 1000 25 50 75 100 125 150 175 t j - junction temperature (c) 16367 i r - rever s e current (a) v r = v rrm
BYT56A, byt56b, byt56d, byt 56g, byt56j, byt56k, byt56m fast avalanche sinterglass diode vishay semiconductors document number: 86032 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.7, 30-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 fig. 5 - max. reverse power dissipat ion vs. junction te mperature fig. 6 - diode capacitance vs. reverse voltage package dimensions in millimeters (inches): sod-64 0 50 250 100 300 150 350 200 400 450 25 50 75 100 125 150 175 t j - junction temperature (c) 16368 p r - rever s e power di ss ipation (mw) p r -limit at 100 % v r p r -limit at 80 % v r v r = v rrm 0 10 20 30 50 70 40 60 80 90 0.1 1 10 100 v r - rever s e voltage (v) 16369 c d - diode capacitance (pf) f = 1 mhz cathode identification 4.3 (0.168) max. 1.35 (0.053) max. 4 (0.156) max. sintered glass case sod-64 26(1.014) min. 26 (1.014) min. document-no.: 6.563-5006.4-4 rev. 3 - date: 09.february.2005 94 9587
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